page 1 of 5 the big deal ? high gain, 31.5 db ? low noise figure, 1.0 db ? high ip3, 32-35 dbm product overview mini-circuits PMA-545G1+ is a e-phemt based low noise mmic amplifer operating from 0.4 to 2.2 ghz with a unique combination of low noise and high ip3 making this amplifer ideal for sensitive receiver ap - plications. this design operates on a single +5v supply and is internally matched to 50 ohms. feature advantages high gain 26-33 db incorporating multiple stages of amplifcation, the PMA-545G1+ provides high gain reducing cost and pcb board space. ultra low noise: 0.9 db nf at 0.9 ghz excellent noise figure, measured in a 50 ohm environment C without any ex - ternal matching. when combined with high gain of this design, it suppresses second stage nf contribution. high ip3: +34 dbm ip3 at 0.9 ghz combining low noise and high ip3 makes this mmic amplifer ideal for low noise receiver front end (rfe) giving the user advantages at both ends of the dynamic range: sensitivity & two-tone im dynamic range output power: +22 dbm at 0.9 ghz the PMA-545G1+ maintains consistent output power capability over the full operating temperature range making it ideal to be used in remote applications such as lnbs as the l band driver stage internally matched no external matching elements required to achieve the advertized noise and output power over the full band mclp package low inductance, repeatable transitions, excellent thermal pad max input power +25 dbm ruggedized design operates up to input powers often seen at receiver inputs. high reliability low, small signal operating current of 160 ma nominal maintains junction temperatures typically below 130c at 85c ground lead temperature key features 3mm x 3mm mclp pkg PMA-545G1+ 50 ? 0.4 to 2.2 ghz lte performance low noise, high ip3 monolithic amplifer notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp mini-circuits ? www.minicircuits.com p.o. box 350166, brooklyn, ny 11235-0003 (718) 934-4500 sales@minicircuits.com
page 2 of 5 product features ? high gain, 31.5 db typ. at 0.9 ghz ? ultra low noise figure, 0.9 db typ. at 0.9 ghz ? high ip3, 34 dbm typ. 0.9 ghz ? output power, up to +22dbm typ. at 0.9 ghz ? single positive supply voltage, 5v ? micro-miniature size - 3mm x 3mm ? aqueous washable typical applications ? cellular ? ism ? gsm ? wcdma ? lte ? gps general description PMA-545G1+ is a high dynamic range, low noise, high ip3, high output power, monolithic amplifer. manu - factured using e-phemt* technology enables it to work with a single positive supply voltage. uncondition - ally stable over the operating frequency. rev. a m151107 PMA-545G1+ th/rs/cp/am 150924 0.4 - 2.2 ghz PMA-545G1+ case style: dq849 simplifed schematic and pad description rf in (2) n/c (1) rf-out & dc (5) gnd nc (6) nc (8) bias (7) nc (3) bias (4) rf-in rf-out and dc bias function pad number description (see application circuit, fig. 2) rf-in 2 rf input pad (connected to rf-in via c1) rf-out & dc 5 rf output pad (connected to rf-out via blocking external cap c2, and supply voltage vs via rf choke l2) bias 4 & 7 bias pad 4 connects to vs via l1 & pad 7 connects to vs gnd paddle in center of bottom connected to ground not used 1,3,6,8 no internal connection; recommended use: per pcb layout pl-346 *enhancement mode pseudomorphic high electron mobility transistor. low noise, high ip3 lte performance monolithic amplifer notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp mini-circuits ? www.minicircuits.com p.o. box 350166, brooklyn, ny 11235-0003 (718) 934-4500 sales@minicircuits.com +rohs compliant the +suffix identifies rohs compliance. see our web site for rohs compliance methodologies and qualifications
page 3 of 5 electrical specifcations (1) at 25c, vd=5v, zo=50 ?, (refer to characterization circuit) parameter condition (ghz) min. typ. max. units frequency range 0.4 2.2 ghz dc voltage (vd) 4.8 5.0 5.2 v dc current 158 186 ma noise figure 0.4 1.2 db 0.9 0.9 1.2 1.0 1.4 1.6 1.0 2.2 1.2 gain 0.4 32.9 db 0.9 31.5 1.2 28.1 31.3 34.5 1.6 30.2 2.2 26.1 input return loss 0.4 9.5 db 0.9 11.6 1.2 11.9 1.6 14.6 2.2 19.9 output return loss 0.4 21.3 db 0.9 17.5 1.2 16.1 1.6 15.1 2.2 14.2 output ip3 0.4 31.7 dbm 0.9 33.4 1.2 33.6 1.6 33.8 2.2 33.6 output power @ 1 db compression (2) 0.4 20.5 dbm 0.9 21.9 1.2 20.0 22.2 1.6 22.4 2.2 22.6 dc current variation vs. temperature (3) -0.156 ma/c dc current variation vs. voltage 0.027 ma/mv thermal resistance 48 c/w absolute maximum ratings (4) parameter ratings operating temperature (5) -40c to 85c storage temperature -65c to 150c channel temperature 150c dc voltage (pad 4,5,7) 6v power dissipation 1.35w input power 25dbm (1) measured on mini-circuits characterization test board tb-607-1+ see characterization test circuit (fig. 1) (3) (current at 85c - current at -45c)/130 (4) permanent damage may occur if any of these limits are exceeded. these maximum ratings are not intended for continuous normal operation. (5) defned with reference to ground pad temperature. PMA-545G1+ dc current histogram 0 5 10 15 20 25 30 35 40 45 <120 120-125 125-130 130-135 135-140 140-145 145-150 150-155 155-160 160-165 165-170 170-175 175-180 180-185 185-190 >190 current (ma) monolithic low noise e-phemt mmic amplifer notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp mini-circuits ? www.minicircuits.com p.o. box 350166, brooklyn, ny 11235-0003 (718) 934-4500 sales@minicircuits.com
page 4 of 5 characterization test circuit PMA-545G1+ fig 1. block diagram of test circuit used for characterization. (dut soldered on mini-circuits characterization test board tb-607-1) gain, output power at 1db compression (p1db), output ip3 (oip3), noise figure are measured using agilents n5242a pna-x microwave network analyzer. conditions: 1. gain: pin=-25 dbm 2. output ip3 (oip3): two tones, spaced 1 mhz apart, 0 dbm/tone at output. 3. vs adjusted for 5v at device (vd), compensating loss of bias tee. recommended application circuit (refer to evaluation board for pcb layout and component values) component description dut PMA-545G1+ c1, c2, c5, c6 100 pf c3, c4 1 f r1 0 ? l1 36 nh l2 47 nh product marking mcl 545g black body model family designation monolithic low noise e-phemt mmic amplifer notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp mini-circuits ? www.minicircuits.com p.o. box 350166, brooklyn, ny 11235-0003 (718) 934-4500 sales@minicircuits.com
page 5 of 5 visual inspection electrical test sam analysis refow 3 cycles, 260c soak 85c/85rh 168 hours bake at 125c, 24 hours visual inspection electrical test sam analysis start msl test flow chart human body model (hbm): class 1b (500v to <1000v) in accordance with ansi/esd stm 5.1 - 2001 machine model (mm): class m1 (passes 40v) in accordance with ansi/esd stm5.2-1999; passes 40v msl rating moisture sensitivity: msl1 in accordance with ipc/jedec j-std-020d esd rating PMA-545G1+ performance data data table swept graphs s-parameter (s2p files) data set (.zip fle) case style dq849 plastic package, exposed paddle, lead fnish: tin-silver over nickel tape & reel f104 standard quantities available on reel 7 reels with 20, 50, 100, 200, 500,1k or 2k devices suggested layout for pcb design pl-346 evaluation board tb-607-1+ environmental ratings env08t1 additional detailed technical information additional information is available on our dash board. to access this information click here monolithic low noise e-phemt mmic amplifer notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp mini-circuits ? www.minicircuits.com p.o. box 350166, brooklyn, ny 11235-0003 (718) 934-4500 sales@minicircuits.com
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